K6F2016U4G datasheet(5/10 Pages) SAMSUNG

Part #	K6F2016U4G

Description	2Mb(128K x 16 bit) Low Power SRAM

Download	10 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 10 page

Revision 0.0

CMOS SRAM

April 2005

K6F2016U4G Family

- 5 -

Preliminary

RECOMMENDED DC OPERATING CONDITIONS1)

Note:

1. Industrial Product: TA=-40 to 85

°C, otherwise specified.

2. Overshoot: Vcc+2.0V in case of pulse width

≤20ns.

3. Undershoot: -2.0V in case of pulse width

≤20ns.

4. Overshoot and undershoot are sampled, not 100% tested.

Item

Symbol

Min

Typ

Max

Unit

Supply voltage

Vcc

2.7

3.0

3.3

V

Ground

Vss

0

V

Input high voltage

VIH

2.2

-

Vcc+0.32)

V

Input low voltage

VIL

-0.33)

-0.6

V

CAPACITANCE1) (f=1MHz, TA=25°C)

1. Capacitance is sampled, not 100% tested

Item

Symbol

Test Condition

Min

Max

Unit

Input capacitance

CIN

VIN=0V

-

8

pF

Input/Output capacitance

CIO

VIO=0V

-

10

pF

DC AND OPERATING CHARACTERISTICS

1. Typical values are measured at VCC=3.0V, TA=25

°C and not 100% tested.

Item

Symbol

Test Conditions

Min

Typ1)

Max

Unit

Input leakage current

ILI

VIN=Vss to Vcc

-1

-

1

µA

Output leakage current

ILO

CS=VIH or OE=VIH or WE=VIL or LB=UB=VIH,

VIO=Vss to Vcc

-1

-

1

µA

Average operating current

ICC1

Cycle time=1

µs, 100%duty, IIO=0mA, CS≤0.2V,

LB

≤0.2V or/and UB≤0.2V, VIN≤0.2V or VIN≥VCC-0.2V

--

4

mA

ICC2

Cycle time=Min, IIO=0mA, 100% duty, CS=VIL,

LB=VIL or/and UB=VIL, VIN=VIL or VIH

70ns

-

22

mA

55ns

-

27

Output low voltage

VOL

IOL = 2.1mA

-

0.4

V

Output high voltage

VOH

IOH = -1.0mA

2.4

-

V

Standby Current (CMOS)

ISB1

Other input =0~Vcc

1) CS

≥Vcc-0.2V(CS controlled) or

2) LB=UB

≥Vcc-0.2V, CS≤0.2V(LB/UB controlled)

-3

10

µA

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