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PB51 Datasheet(PDF) 2 Page - Cirrus Logic |
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PB51 Datasheet(HTML) 2 Page - Cirrus Logic |
2 / 4 page APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739 2 ABSOLUTE MAXIMUM RATINGS SPECIFICATIONS PB51 • PB51A SUPPLY VOLTAGE, +V S to –VS 300V OUTPUT CURRENT, within SOA 2.0A POWER DISSIPATION, internal at T C = 25°C 1 83W INPUT VOLTAGE, referred to COM ±15V TEMPERATURE, pin solder—10s max. 260°C TEMPERATURE, junction1 175°C TEMPERATURE RANGE, storage –40 to +85°C OPERATING TEMPERATURE RANGE, case –25 to +85°C SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS PB51 PB51A PARAMETER TEST CONDITIONS2 MIN TYP MAX MIN TYP MAX UNITS INPUT OFFSET VOLTAGE, initial ±.75 ±1.75 * ±1.0 V OFFSET VOLTAGE, vs. temperature Full temperature range3 –4.5 –7 * * mV/°C INPUT IMPEDANCE, DC 25 50 * * k INPUT CAPACITANCE 3 * pF CLOSED LOOP GAIN RANGE 3 10 25 * * * V/V GAIN ACCURACY, internal Rg, Rf AV = 3 ±10 ±15 * * % GAIN ACCURACY, external Rf AV = 10 ±15 ±25 * * % PHASE SHIFT f = 10kHz, AVC L = 10, CC = 22pF 10 * ° f = 200kHz, AVC L = 10, CC = 22pF 60 * ° OUTPUT VOLTAGE SWING Io = 1.5A (PB58), 2A (PB58A) VS–11 VS –8 VS–15 VS–11 V VOLTAGE SWING Io = 1A VS–10 VS –7 * * V VOLTAGE SWING Io = .1A VS–8 VS –5 * * V CURRENT, continuous 1.5 2.0 A SLEW RATE Full temperature range 50 100 75 * V/µs CAPACITIVE LOAD Full temperature range 2200 * pF SETTLING TIME to .1% RL = 100, 2V step 2 * µs POWER BANDWIDTH VC = 100 Vpp 160 320 240 * kHz SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 25, Vcc = ±100 100 * kHz SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 3, Vcc = ±30 1 * MHz POWER SUPPLY VOLTAGE, ±VS4 Full temperature range ±156 ±60 ±150 * * * V CURRENT, quiescent VS = ±15 11 * mA VS = ±60 12 * mA VS = ±150 14 18 * * mA THERMAL RESISTANCE, AC junction to case5 Full temp. range, f > 60Hz 1.2 1.3 * * °C/W RESISTANCE, DC junction to case Full temp. range, f < 60Hz 1.6 1.8 * * °C/W RESISTANCE, junction to air Full temperature range 30 * °C/W TEMPERATURE RANGE, case Meets full range specifications –25 25 85 * * * °C NOTES: * The specification of PB51A is identical to the specification for PB51 in applicable column to the left. 1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve high MTTF (Mean Time to Failure). 2. The power supply voltage specified under typical (TYP) applies, T C = 25°C unless otherwise noted. 3. Guaranteed by design but not tested. 4. +V S and –VS denote the positive and negative supply rail respectively. 5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz. 6. +V S/–VS must be at least 15V above/below COM. The PB51 is constructed from MOSFET transistors. ESD handling procedures must be observed. The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes. CAUTION |
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