CMT01N60
POWER FIELD EFFECT TRANSISTOR
2005/12/05 Rev. 1.5
Champion Microelectronic Corporation
Page 2
ORDERING INFORMATION
Part Number
Package
CMT01N60N251
TO-251
CMT01N60N252
TO-252
CMT01N60N92
TO-92
CMT01N60GN251*
TO-251
CMT01N60GN252*
TO-252
CMT01N60GN92*
TO-92
*Note: G : Suffix for Pb Free Product
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
CMT01N60
Characteristic
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
V(BR)DSS
600
V
Drain-Source Leakage Current
(VDS = 600 V, VGS = 0 V)
(VDS = 480 V, VGS = 0 V, TJ = 125℃)
IDSS
0.1
0.3
mA
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
IGSSF
100
nA
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
IGSSR
100
nA
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
VGS(th)
2.0
4.0
V
Static Drain-Source On-Resistance (VGS = 10 V, ID = 0.6A) *
RDS(on)
8.0
Ω
Forward Transconductance (VDS ≧ 50 V, ID = 0.5A) *
gFS
0.5
mhos
Input Capacitance
Ciss
210
pF
Output Capacitance
Coss
28
pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Crss
4.2
pF
Turn-On Delay Time
td(on)
8
ns
Rise Time
tr
21
ns
Turn-Off Delay Time
td(off)
18
ns
Fall Time
(VDD = 300 V, ID = 1.0 A,
VGS = 10 V,
RG = 18Ω) *
tf
24
ns
Total Gate Charge
Qg
8.5
14
nC
Gate-Source Charge
Qgs
1.8
nC
Gate-Drain Charge
(VDS = 400 V, ID = 1.0 A,
VGS = 10 V)*
Qgd
4
nC
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
LD
4.5
nH
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
LS
7.5
nH
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
VSD
1.5
V
Forward Turn-On Time
ton
**
ns
Reverse Recovery Time
(IS = 1.0 A, VGS = 0 V,
dIS/dt = 100A/μs)
trr
350
500
ns
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
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