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TSFF5410 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSFF5410 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page VISHAY TSFF5410 Document Number 81091 Rev. 1.4, 23-Jun-04 Vishay Semiconductors www.vishay.com 1 94 8390 High Speed IR Emitting Diode in ∅ 5 mm (T-1¾) Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features • High modulation bandwidth (23 MHz) • Extra high radiant power and radiant intensity • Low forward voltage • Suitable for high pulse current operation • Standard T-1¾ ( ∅ 5 mm) package • Angle of half intensity ϕ = ± 22° • Peak wavelength λp = 870 nm • High reliability • Good spectral matching to Si photodetectors • Lead-free device Applications Infrared video data transmission between Camcorder and TV set. Free air data transmission systems with high modu- lation frequencies or high data transmission rate requirements. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Reverse Voltage VR 5V Forward current IF 100 mA Peak Forward Current tp/T = 0.5, tp = 100 µsIFM 200 mA Surge Forward Current tp = 100 µsIFSM 1A Power Dissipation PV 250 mW Junction Temperature Tj 100 °C Operating Temperature Range Tamb - 25 to + 85 °C Storage Temperature Range Tstg - 25 to + 85 °C Soldering Temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C Thermal Resistance Junction/ Ambient RthJA 300 K/W |
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