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K4M51163PC-RF75 Datasheet(PDF) 5 Page - Samsung semiconductor |
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K4M51163PC-RF75 Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 12 page K4M51163PC - R(B)E/G/C/F February 2006 Mobile SDRAM DC CHARACTERISTICS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 °C ~ 85°C for Extended, -25°C ~ 70°C for Commercial) NOTES: 1. Measured with outputs open. 2. Refresh period is 64ms. 3. It has +/-5 °C tolerance. 4. K4M51163PC-R(B)E/C** 5. K4M51163PC-R(B)G/F** 6. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request. Please contact Samsung for more information. 7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ). Parameter Symbol Test Condition Version Unit Note -75 -90 -1L Operating Current (One Bank Active) ICC1 Burst length = 1 tRC ≥ tRC(min) IO = 0 mA 90 90 90 mA 1 Precharge Standby Current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 10ns 0.3 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 0.3 Precharge Standby Current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 10 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 1 Active Standby Current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 10ns 6 mA ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 3 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 25 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 15 mA Operating Current (Burst Mode) ICC4 IO = 0 mA Page burst 4Banks Activated tCCD = 2CLKs 95 80 80 mA 1 Refresh Current ICC5 tARFC ≥ tARFC(min) 150 150 150 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V TCSR 45 *3 85/70 °C -E/C Full Array 300 600 uA 4 1/2 of Full 270 500 1/4 of Full 255 450 -G/F Full Array 250 500 5 1/2 of Full 220 400 1/4 of Full 205 350 Deep Power Down Current ICC8 CKE ≤ 0.2V 10 uA 6 |
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Similar Description - K4M51163PC-RF75 |
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