K4M51163PC-RF75 datasheet(5/12 Pages) SAMSUNG

Part #	K4M51163PC-RF75

Description	8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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5 / 12 page

K4M51163PC - R(B)E/G/C/F

February 2006

Mobile SDRAM

DC CHARACTERISTICS

Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25

°C ~ 85°C for Extended, -25°C ~ 70°C for Commercial)

NOTES:

1. Measured with outputs open.

2. Refresh period is 64ms.

3. It has +/-5

°C tolerance.

4. K4M51163PC-R(B)E/C**

5. K4M51163PC-R(B)G/F**

6. DPD(Deep Power Down) function is an optional feature, and it will be enabled upon request.

Please contact Samsung for more information.

7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).

Parameter

Symbol

Test Condition

Version

Unit

Note

-75

-90

-1L

Operating Current

(One Bank Active)

ICC1

Burst length = 1

tRC

≥ tRC(min)

IO = 0 mA

90

mA

1

Precharge Standby Current in

power-down mode

ICC2P

CKE

≤ VIL(max), tCC = 10ns

0.3

mA

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

0.3

Precharge Standby Current

in non power-down mode

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

10

mA

ICC2NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

1

Active Standby Current

in power-down mode

ICC3P

CKE

≤ VIL(max), tCC = 10ns

6

mA

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

3

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = 10ns

Input signals are changed one time during 20ns

25

mA

ICC3NS

CKE

≥ VIH(min), CLK ≤ VIL(max), tCC = ∞

Input signals are stable

15

mA

Operating Current

(Burst Mode)

ICC4

IO = 0 mA

Page burst

4Banks Activated

tCCD = 2CLKs

95

80

mA

1

Refresh Current

ICC5

tARFC

≥ tARFC(min)

150

mA

2

Self Refresh Current

ICC6

CKE

≤ 0.2V

TCSR

45 *3

85/70

°C

-E/C

Full Array

300

600

uA

4

1/2 of Full

270

500

1/4 of Full

255

450

-G/F

Full Array

250

500

5

1/2 of Full

220

400

1/4 of Full

205

350

Deep Power Down Current

ICC8

CKE

≤ 0.2V

10

uA

6

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