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K9WAG08U1A-P Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K9WAG08U1A-P
Description  1G x 8 Bit / 2G x 8 Bit NAND Flash Memory
Download  49 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9WAG08U1A-P Datasheet(HTML) 10 Page - Samsung semiconductor

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FLASH MEMORY
10
K9WAG08U1A
K9K8G08U0A
Preliminary
K9K8G08U0A is arranged in four 2Gb memory planes. Each plane contains 2,048 blocks and 2112 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that two-plane program/erase operations can be executed by dividing the memory array into plane 0~1 or plane 2~3
separately.
For example, two-plane program/erase operation into plane 0 and plane 2 is prohibited. That is to say, two-plane program/erase oper-
ation into plane 0 and plane 1 or into plane 2 and plane 3 is allowed
Plane 0
Plane 1
Plane 2
Plane 3
(2048 Block)
(2048 Block)
(2048 Block)
(2048 Block)
Page 0
Page 1
Page 63
Page 62
Memory Map
Block 0
Page 0
Page 1
Page 63
Page 62
Block 1
Page 0
Page 1
Page 63
Page 62
Block 4096
Page 0
Page 1
Page 63
Page 62
Block 4097
Page 0
Page 1
Page 63
Page 62
Block 4094
Page 0
Page 1
Page 63
Page 62
Block 4095
Page 0
Page 1
Page 63
Page 62
Block 8190
Page 0
Page 1
Page 63
Page 62
Block 8191
2112byte Page Registers
2112byte Page Registers
2112byte Page Registers
2112byte Page Registers
Page 0
Page 1
Page 63
Page 62
Block 2
Page 0
Page 1
Page 63
Page 62
Block 3
Page 0
Page 1
Page 63
Page 62
Block 4098
Page 0
Page 1
Page 63
Page 62
Block 4099
Page 0
Page 1
Page 63
Page 62
Block 4092
Page 0
Page 1
Page 63
Page 62
Block 4093
Page 0
Page 1
Page 63
Page 62
Block 8188
Page 0
Page 1
Page 63
Page 62
Block 8189


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