1

Schottky Barrier Diodes (SBD)

MA2D760

Silicon epitaxial planar type

For switching power supply

I Features

• TO-220D Package

•Allowing to rectify under (I

• V

• Single type

I Absolute Maximum Ratings T

Unit : mm

1 : Cathode

2 : Anode

TO-220D Package (2-pin)

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage

90

V

Average forward current

5A

Non-repetitive peak forward

90

A

Junction temperature

−40 to +125

°C

Storage temperature

−40 to +125

°C

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave

(non-repetitive)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

3

mA

Forward voltage (DC)

0.58

V

Thermal resistance

Direct current (between junction and case)

3

°C/W

I Electrical Characteristics T

a

= 25°C

Note) Rated input/output frequency: 150 kHz

1

9.9

± 0.3

4.6

± 0.2

2.9

± 0.2

0.8

± 0.1

1.4

± 0.2

2

φ 3.2 ± 0.1

2.6

± 0.1

0.55

± 0.15

2.54

± 0.3

5.08

± 0.5