Electronic Components Datasheet Search |
|
MP4TD0900G Datasheet(PDF) 1 Page - M-pulse Microwave Inc. |
|
MP4TD0900G Datasheet(HTML) 1 Page - M-pulse Microwave Inc. |
1 / 3 page Specification Subject to Change Without Notice M-Pulse Microwave __________________________________________________________________________________ 1 PH (408) 432-1480 FX (408) 432-3440 M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier MP4TD0900 Features • Cascadable 50Ω Gain Block • 3dB Bandwidth: DC to 4.5 GHz 8.0 dB Typical Gain @ 1.0 GHz • Low SWR: <1.5 from 0.1 to 3.0 Ghz • Unconditionally Stable (k>1) Description M-Pulse's MP4TD0900 is a high performance silicon bipolar MMIC chip. The MP4TD0900 is designed for use where a general purpose 50 Ω gain block is required. Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications. The MP4TD0900 is fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability. TYPICAL POWER GAIN vs FREQUENCY 0 2 4 6 8 10 12 0.1 1 10 FR EQU ENC Y (G H z) Id= 35mA Chip Outline Drawing1,2,3,4 RF Input Feedback Capacitor Ground Optional RF Output & +7.8 Volts 375 (14.8 mil) µ 375 (14.8 mil) µ Notes: (unless otherwise specified) 1. Chip Thickness is 120 µm; 4.8 mils 2. Bond Pads are 40 µm; 1.6 mils typical in diameter 3. Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4. Tolerance: µm .xx = ±.13; mil .x = ±.5 Ordering Information Model No. Type of Carrier MP4TD0900G GEL PACK MP4TD0900W Waffle Pack Electrical Specifications @ TA = +25°C, Id = 35 mA; Z0 = 50Ω (Performance Requires 45 pF Feedback Capacitor Symbol Parameters Test Conditions Units Min. Typ. Max. Gp Power Gain ( S212) f = 0.1 GHz dB - 8.0 - ∆Gp Gain Flatness f = 0.1 to 3.0 GHz dB - + 0.3 - f3dB 3 dB Bandwidth - GHz - 4.5 - SWRin Input SWR f = 0.1 to 3.0 GHz - - 2.0 - SWRout Output SWR f = 0.1 to 3.0 GHz - - 1.5 - P1dB Output Power @ 1dB Gain Compression f = 1.0 GHz dBm - 12.0 - NF 50 Ω Noise Figure f = 1.0 GHz dB - 6.0 - IP3 Third Order Intercept Point f = 1.0 GHz dBm - 23.0 - tD Group Delay f = 1.0 GHz ps - 100 - Vd Device Voltage - V 7.0 7.8 8.6 dV/dT Device Voltage Temperature Coefficient - mV/ °C - -16.0 - |
Similar Part No. - MP4TD0900G |
|
Similar Description - MP4TD0900G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |