Silicon Bipolar MMIC Cascadable Amplifier

MP4TD0770

Specification Subject to Change Without Notice

M-Pulse Microwave

__________________________________________________________________________________

2

PH (408) 432-1480

FX (408) 432-3440

Parameter

Absolute Maximum

Device Current

60 mA

275 mW

RF Input Power

+13 dBm

Junction Temperature

200

°C

Storage Temperature

-65

°C to +200°C

Thermal Resistance:

1. Exceeding these limits may cause permanent damage.

2. Case Temperature (Tc) = 25

°C.

3. Derate at 6.5 mW/

°C for Tc > 157°C.

Typical Bias Configuration

IN

OUT

1

2

MP4TD0770

3

4

RFC (Optional)

C (DC Block)

C (DC Block)

Rbias

Vcc > 7 V

Vd = 4.0 V

Id =

Vcc - Vd

Rbias

Typical Performance Curves @ Id = 22 mA, TA = +25°C (unless otherwise noted)

DEVICE CURRENT vs DEVICE VOLTAGE

0

5

10

15

20

25

30

35

40

00 .51

1 .522 .53

3 .544 .5

V d , DE V ICE V O L T A G E (V )

POWER GAIN vs CURRENT

0

2

4

6

8

10

12

14

0

5

10

15

20

2 5

30

35

40

45

5 0

Id , DE V ICE CURRE NT (m A )

f= 0 .1 G H z

f= 0 .5 G H z

f= 1.0 G H z

f= 2.0 G H z

RETURN LOSS vs FREQUENCY

-3 5

-3 0

-2 5

-2 0

-1 5

-1 0

-5

0.1

1

10

F RE Q UE NCY (G H z)

Input

O utput

vs FREQUENCY

0

2

4

6

8

10

12

14

16

0.1

1

10

F RE Q UE NCY (G H z)

Id =22m A

Id =40m A