Silicon Bipolar MMIC Cascadable Amplifier

MP4TD0670

Specification Subject to Change Without Notice

M-Pulse Microwave

__________________________________________________________________________________

2

PH (408) 432-1480

FX (408) 432-3440

Parameter

Absolute Maximum

Device Current

50 mA

200 mW

RF Input Power

+20 dBm

Junction Temperature

200

°C

Storage Temperature

-65

°C to +200°C

Thermal Resistance:

1. Exceeding these limits may cause permanent damage.

2. Case Temperature (Tc) = 25

°C.

3. Derate at 6.7 mW/

°C for Tc > 170°C.

Typical Bias Configuration

IN

OUT

1

2

3

4

RFC (Optional)

C (DC Block)

C (DC Block)

Rbias

Vcc > 5.5 V

Vd =3.5 V

Id =

Vcc - Vd

Rbias

MP4TD0670

Typical Performance Curves @ Id = 16 mA, TA = +25°C (unless otherwise noted)

DEVICE CURRENT vs DEVICE VOLTAGE

0

5

10

15

20

25

01

23

4

Vd, D EVIC E VO LTAGE (V)

POWER GAIN vs CURRENT

0

5

10

15

20

25

10

1 5

20

25

30

35

4 0

Id , DE V ICE CURRE NT (m A )

0.1 G H z

0.5 G H z

1.0 G H z

2.0 G H z

RETURN LOSS vs FREQUENCY

-3 0

-2 5

-2 0

-1 5

-1 0

-5

0

0.1

1

10

F RE Q UE NCY (G H z)

Input

O utput

vs FREQUENCY

0

2

4

6

8

10

12

0.1

1

1 0

F RE Q UE NCY (G H z)

Id =16m A

Id =20m A

Id = 3 0 m A