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Description Features n PLANAR PROCESS n 200 mW POWER DISSIPATION Mechanical Dimensions n INDUSTRY STANDARD SOT-23 PACKAGE n MEETS UL SPECIFICATION 94V-0 Electrical Characteristics @ 25OC. Maximum Ratings Peak Reverse Voltage...V RM RMS Reverse Voltage...V R(rms) FMBBAV70 Data Sheet 200 mW EPITAXIAL PLANAR DIODES Units FMBBAV70 85 75 Volts Volts Page 10-26 Average Forward Rectified Current...I O Non-Repetitive Peak Forward Surge Current...I FSM Forward Voltage...V F @ I F = 100 mA DC Reverse Current...I R @ V R = 70V Power Dissipation...P D Typical Junction Capacitance...C J Reverse Recovery Time...t RR Operating Temperature Range...T J Storage Temperature Range...T STRG ............................................. 625 ............................................... ............................................. 4.0 ............................................... ............................................. 1.0 ............................................... ............................................. 0.1 ............................................... ............................................. 200 ............................................... ............................................. 1.5 ............................................... ............................................. 4.0 ............................................... ......................................... -25 to 85 .......................................... ......................................... -65 to 150 .......................................... mAmps Amps Volts µAmps mW pF nS °C °C .110 .060 .037 .037 .115 .016 .043 .004 .016 1 2 3 Pin 2 Pin 3 Pin 1 P VV = 100nS Device Under T Device Under T Device Under T Device Under T Device Under Test est est est est 50 Ohms 5K Ohms R G = 50 Ohms .01 uF I F Output Trr I R 0.1 I R |
