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| MP4T6365 |
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 MPLUSE
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Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 1 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •f T to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable •Can be Screened to JANTX, JANTXV Equivalent Levels Description The MP4T6365 family of low v oltage, high gain band- width silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transis- tors are especially attractiv e for low operating v oltage low noise amplifiers or driv er amplifiers at frequencies to 4 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz. The MP4T6365 family was designed to hav e low noise figure at operating v oltages as low as 3 v olts. These transistors also exhibit low phase noise in VCOs operating at 5 v olts or less. Because this transistor family was specifically designed to perate from low bias v oltage, it has superior phase noise in comparison to similar current bipolar transistors with higher collector breakdown v oltage when operating under the same low v oltage conditions. The MP4T6365 series transistors are av ailable in hermetic Micro-X packages, the SOT-23, the SOT-143, and in chip form (MP4T636500). Other stripline and hermetic packages are av ailable. The chip and hermetic packages can be screened to JANTX, JANTXV equiv alent lev els. The plastic parts can be supplied on tape and reel. All of M-Pulse’s silicon bipolar transistor families use silicon dioxide and silicon nitride passiv ation to assure low 1/F noise for amplifier and oscillator applications. Case Styles SOT-23 SOT-143 Chip Micro-X |
