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MP4T64535 Datasheet(PDF) 2 Page - M-pulse Microwave Inc. |
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MP4T64535 Datasheet(HTML) 2 Page - M-pulse Microwave Inc. |
2 / 8 page Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Series Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 2 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 Absolute Maximum Ratings MP4T645 Series Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 1.5 V Collector Current IC 65 mA Junction Operating Temperature Tj 200 °C Storage Temperature Chip or Ceramic Packages -65 °C to +200°C Plastic Packages -65 °C to +125°C Total Power Dissipation at 25 °C Derate Linearly to: +150 °C Chip 400 mW +125 °C Plastic Package (SOT-23) 200 mW +150 °C Ceramic Package (Micro-X) 300 mW Electrical Specifications @ 25 °C MP4T645 Series Parameter of Test Condition Symbol Units MP4T64500 Chip MP4T64535 SOT-23 MP4T64533 Micro-X Gain Bandwidth Product VCE = 8 volts fT GHz 10 typ 8 typ 9 typ IC = 20 mA Insertion Power Gain VCE = 8 volts |S21E| 2 dB IC = 20 mA f = 1 GHz 18 typ 16 typ 17 typ f = 2 GHz 11 min 10 min 10 min f = 4 GHz 7 typ 6.5 typ Noise Figure VCE = 8 volts NF dB IC = 7 mA f = 1 GHz 1.7 max 1.7 max 1.7 max f = 2 GHz 2.0 typ 2.5 typ 2.0 typ Unilateral Gain VCE = 8 volts GTU (max) dB IC = 7 mA f = 1 GHz 18 typ 16 typ 17 typ f = 2 GHz 11 typ 10 typ 11 typ Maximum Available Gain VCE = 8 volts MAG dB IC = 10 mA f = 2 GHz 14 typ 13 typ 14 typ f = 4 GHz 12 typ 10 typ 11.5 typ Power Out at 1 dB VCE = 8 volts P1dB dBm Compression IC = 10 mA f = 1 GHz 16 typ 16 typ 16 typ f = 4 GHz 11 typ 11 typ 11 typ Note: The electrical characteristics of the MP4T64539 (SOT-143) are very similar to those of the MP4T64533 (SOT-23). |
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