A94 datasheet(1/3 Pages) JIANGSU

Part #	A94

Description	TRANSISTOR竊?PNP 竊

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Manufacturer	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Direct Link	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors

A94

TRANSISTOR（ PNP ）

FEATURES

Power dissipation

PCM: 0.625 W

（Tamb=25℃）

Collector current

ICM:

-0.2 A

Collector-base voltage

V(BR)CBO :

-400 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL

CHARACTERISTICS （ Tamb=25 ℃

unless

otherwise

specified）

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V (BR) CBO

Ic= -100μA， IE=0

-400

V

Collector-emitter breakdown voltage

V (BR) CEO

IC= -1 mA，IB=0

-400

V

Emitter-base breakdown voltage

V (BR) EBO

IE=-100μA，IC=0

-5

　　V

Collector cut-off current

ICBO

VCB=-400 V, IE=0

-0.1

　μA

Collector cut-off current

ICEO

VCE=-400 V, IB=0

-5

　μA

Emitter cut-off current

IEBO

VEB= -4 V, IC=0

-0.1

　μA

hFE（1）

VCE=-10V, IC=-10 mA

80

300

hFE（2）

VCE=-10V, IC=-1m A

70

DC current gain

hFE（3）

VCE=-10V, IC=-100 mA

60

VCE (sat)

IC=-10 mA，IB=-1m A

-0.2

V

Collector-emitter saturation voltage

VCE (sat)

IC=-50 mA，IB=-5m A

-0.3

V

Base-emitter saturation voltage

VBE (sat)

IC=-10 mA，IB= -1 mA

-0.75

V

Transition frequency

fT

VCE=-20V， IC=-10mA

f =30MHz

50

MHz

1 2 3

TO—92

1.EMITTER

2.BASE

3. COLLECTOR

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