NTA4001N datasheet(1/6 Pages) ONSEMI

Part #	NTA4001N

Description	Small Signal MOSFET 20 V, 238 mA, Single, N?묬hannel, Gate ESD Protection, SC??5

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Manufacturer	ONSEMI [ON Semiconductor]

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September, 2003 − Rev. 0

1

Publication Order Number:

NTA4001N/D

NTA4001N

Small Signal MOSFET

20 V, 238 mA, Single, N−Channel, Gate

ESD Protection, SC−75

Features

• Low Gate Charge for Fast Switching

• Small 1.6 X 1.6 mm Footprint

• ESD Protected Gate

• Pb−Free Package for “Green Manufacturing” Compliance

Applications

• Power Management Load Switch

• Level Shift

• Portable Applications such as Cell Phones, Media Players,

Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.

Maximum Ratings (TJ = 25°C unless otherwise stated)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

20

V

Gate−to−Source Voltage

VGS

±10

V

Continuous Drain

Current (Note 1)

Steady State = 25

°C

ID

238

mA

Power Dissipation

(Note 1)

Steady State = 25

°C

PD

300

mW

Pulsed Drain Current

tP v 10 ms

IDM

714

mA

Operating Junction and Storage Temperature

TJ,

TSTG

−55 to

150

°C

Continuous Source Current (Body Diode)

ISD

238

mA

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL

260

°C

Thermal Resistance Ratings

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 1)

RqJA

416

°C/W

1. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq.

[1 oz] including traces).

2.2

W @ 2.5 V

Top View

SC−75 / SOT−416

CASE 463

Style 5

2

1

http://onsemi.com

SC−75 (3−Leads)

Drain

Gate

3

1

2

Source

3

RDS(on)

Typ @ VGS

ID MAX

(Note 1)

V(BR)DSS

1.5

W @ 4.5 V

20 V

238 mA

1

3

2

N−Channel

MARKING DIAGRAM

TF = Specific Device Code

D

= Date Code

TF D

1

3

2

Device

Package

Shipping

ORDERING INFORMATION

NTA4001NT1

SC−75

3000 / Tape & Reel

NTA4001NT1G

SC−75

Pb−Free

3000 / Tape & Reel

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