AS4C1M16E5-60JI datasheet(6/22 Pages) ALSC

Part #	AS4C1M16E5-60JI

Description	5V 1M횞16 CMOS DRAM (EDO)

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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6 / 22 page

®

AS4C1M16E5

4/11/01; v.1.0

Alliance Semiconductor

P. 6 of 22

Write cycle

Read-modify-write cycle

Refresh cycle

Symbol

Parameter

-45

-50

-60

Unit

Notes

Min

Max

Min

Max

Min

Max

tWCS

Write command setup time

0

–

0

–

0

–

ns

14

tWCH

Write command hold time

10

–

10

–

10

–

ns

14

tWP

Write command pulse width

10

–

10

–

10

–

ns

tRWL

Write command to RAS lead time

10

–

10

–

10

–

ns

tCWL

Write command to CAS lead time

8

–

8

–

10

–

ns

tDS

Data-in setup time

0

–

0

–

0

–

ns

15

tDH

Data-in hold time

8

–

8

–

10

–

ns

15

Symbol

Parameter

-45

-50

-60

Unit

Notes

Min

Max

Min

Max

Min

Max

tRWC

Read-write cycle time

105

–

113

–

135

–

ns

tRWD

RAS to WE delay time

65

–

67

–

77

–

ns

14

tCWD

CAS to WE delay time

30

–

32

–

35

–

ns

14

tAWD

Column address to WE delay time

40

–

42

–

47

–

ns

14

Symbol

Parameter

-45

-50

-60

Unit

Notes

Min

Max

Min

Max

Min

Max

tCSR

CAS setup time (CAS-before-RAS)

5–

5

–

5–

ns

6

tCHR

CAS hold time (CAS-before-RAS)8

–

8

–

10

–

ns

6

tRPC

RAS precharge to CAS hold time

0–

0

–

0–

ns

tCPT

CAS precharge time

(CBR counter test)

10

–

10

–

10

–

ns

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