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AS4C1M16E5-60JI Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation |
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AS4C1M16E5-60JI Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation |
6 / 22 page ® AS4C1M16E5 4/11/01; v.1.0 Alliance Semiconductor P. 6 of 22 Write cycle Read-modify-write cycle Refresh cycle Symbol Parameter -45 -50 -60 Unit Notes Min Max Min Max Min Max tWCS Write command setup time 0 – 0 – 0 – ns 14 tWCH Write command hold time 10 – 10 – 10 – ns 14 tWP Write command pulse width 10 – 10 – 10 – ns tRWL Write command to RAS lead time 10 – 10 – 10 – ns tCWL Write command to CAS lead time 8 – 8 – 10 – ns tDS Data-in setup time 0 – 0 – 0 – ns 15 tDH Data-in hold time 8 – 8 – 10 – ns 15 Symbol Parameter -45 -50 -60 Unit Notes Min Max Min Max Min Max tRWC Read-write cycle time 105 – 113 – 135 – ns tRWD RAS to WE delay time 65 – 67 – 77 – ns 14 tCWD CAS to WE delay time 30 – 32 – 35 – ns 14 tAWD Column address to WE delay time 40 – 42 – 47 – ns 14 Symbol Parameter -45 -50 -60 Unit Notes Min Max Min Max Min Max tCSR CAS setup time (CAS-before-RAS) 5– 5 – 5– ns 6 tCHR CAS hold time (CAS-before-RAS)8 – 8 – 10 – ns 6 tRPC RAS precharge to CAS hold time 0– 0 – 0– ns tCPT CAS precharge time (CBR counter test) 10 – 10 – 10 – ns |
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