1

Publication date: July 2003

SJJ00228AED

Composite Transistors

XN0F261

Silicon NPN epitaxial planar type

For muting

■ Features

• Two elements incorporated into one package

(Collector-coupled transistors with built-in resistor)

• Reduction of the mounting area and assembly cost by one half

■ Absolute Maximum Ratings T

a

= 25°C

Unit: mm

Internal Connection

Marking Symbol: 6B

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

30

V

Collector-emitter voltage (Base open)

20

V

Emitter-base voltage (Collector open)

5V

Collector current

600

mA

Total power dissipation

300

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

6

Tr2

Tr1

5

4

3

1

2

■ Electrical Characteristics T

a

= 25°C ± 3°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base voltage (Emitter open)

= 1 µA, I

E

= 030

V

Collector-emitter voltage (Base open)

V

Emitter-base voltage (Collector open)

V

Collector-base cutoff current (Emitter open)

= 30 V, I

E

= 01

µA

Emitter-base cutoff current (Collector open)

µA

Forward current transfer ratio

100

600



Collector-emitter saturation voltage

= 50 mA, I

B

= 2.5 mA

80

mV

Input resistance

−30%

3.3

+30%

k

Ω

Transition frequency

200

MHz

2.90

0.16

+0.10

–0.06

(0.95)

0.30

+0.10

–0.05

0.50

+0.10

–0.05

(0.95)

6

5

4

1

32

+0.20

–0.05

10˚

1: Emitter (Tr1)

4: Base (Tr2)

2: Collector

5: N.C.

3: Emitter (Tr2)

6: Base (Tr1)

EIAJ: SC-74

Mini6-G1 Package