Advance Product Information

September 15, 2004

10

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994-8504 Email: info-mmw@tqs.com Web: www.triquint.com

Evaluation Board Drawing

Vc

Vg1

Vd

Vg2

RF In

RF Out

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should

be observed during handling, assembly and test.

TGA2509-EPU-FL

Bias Procedures:

Vc bias connection is optional, but the 0.1uF cap always needs to be connected.

For biasing without AGC control:

1. Apply -1.2V to Vg1, and -1.2V to Vg2.

2. Apply +12V to Vd.

4. Adjust Vg1 to attain 580 mA drain current (Id)

4. Adjust Vg2 to attain 1080 mA total drain current (Id).

For biasing with AGC control:

1. Apply -1.2V to Vg1 and -1.2V to Vg2

2. Apply +12V to Vd

3. Apply +2.6V to Vc

4. Adjust Vg1 to attain 580 mA drain current (Id)

5. Adjust Vg2 to attain 1080 mA total drain current (Id).

6. Adjust Vc as needed to control gain level.