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NUF6401MNT1G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUF6401MNT1G
Description  EMI Filter with ESD Protection
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUF6401MNT1G Datasheet(HTML) 2 Page - ON Semiconductor

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NUF6401MN
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2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Air Discharge
Contact Discharge
VPP
15
8.0
kV
Steady−State Power per Resistor
PR
mW
Steady−State Power per Package
PT
mW
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
VRWM
5.0
V
Breakdown Voltage
VBR
IR = 1.0 mA
6.0
7.0
V
Leakage Current
IR
VRWM = 3.0 V
1.0
mA
Resistance
RA
IR = 20 mA
85
100
115
W
Capacitance (Notes 1 and 2)
Cd
VR = 2.5 V, f = 1.0 MHz
20
pF
Cut−Off Frequency (Note 3)
f3dB
Above this frequency,
appreciable attenuation occurs
95
MHz
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.


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