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NUF6401MNT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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NUF6401MNT1G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 4 page NUF6401MN http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit ESD Discharge IEC61000−4−2 Air Discharge Contact Discharge VPP 15 8.0 kV Steady−State Power per Resistor PR mW Steady−State Power per Package PT mW Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) TL 260 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit Maximum Reverse Working Voltage VRWM 5.0 V Breakdown Voltage VBR IR = 1.0 mA 6.0 7.0 V Leakage Current IR VRWM = 3.0 V 1.0 mA Resistance RA IR = 20 mA 85 100 115 W Capacitance (Notes 1 and 2) Cd VR = 2.5 V, f = 1.0 MHz 20 pF Cut−Off Frequency (Note 3) f3dB Above this frequency, appreciable attenuation occurs 95 MHz 1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz. 2. Total line capacitance is 2 times the Diode Capacitance (Cd). 3. 50 W source and 50 W load termination. |
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