K7D321874A-HGC33 datasheet(11/19 Pages) SAMSUNG

Part #	K7D321874A-HGC33

Description	32Mb A-die DDR SRAM Specification

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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11 / 19 page

Rev 1.4

1Mx36 & 2Mx18 SRAM

- 11

Oct. 2005

K7D321874A

K7D323674A

RECOMMENDED DC OPERATING CONDITIONS

NOTE :1. These are DC test criteria. DC design criteria is VREF

±50mV. The AC VIH/VIL levels are defined separately for measuring

timing parameters.

2. VIH (Max)DC=

VDDQ+0.3, VIH (Max)AC=2.6V (2.1V for DQs) (pulse width ≤ 20% of cycle time).

3. VIL (Min)DC=

-0.3V, VIL (Min)AC=-1.0V (-0.5V for DQs) (pulse width ≤ 20% of cycle time).

Parameter

Symbol

Min

Typ

Max

Unit

Note

Core Power Supply Voltage

VDD

1.7

2.5

2.6

V

Output Power Supply Voltage

VDDQ

1.4

1.5

1.9

V

Input High Level Voltage

VIH

VREF+0.1

-

VDDQ+0.3

V

1, 2

Input Low Level Voltage

VIL

-0.3

-

VREF-0.1

V

1, 3

Input Reference Voltage

VREF

0.68

0.75

1.0

V

ABSOLUTE MAXIMUM RATINGS

NOTE : Power Dissipation Capability will be dependent upon package characteristics and use environment. See enclosed thermal impedance data.

Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Parameter

Symbol

Value

Unit

Core Supply Voltage Relative to VSS

VDD

-0.5 to 3.13

V

Output Supply Voltage Relative to VSS

VDDQ

-0.5 to 2.3

V

Voltage on any pin Relative to VSS

VIN

-0.5 to VDDQ+0.5 (2.3V MAX)V

Output Short-Circuit Current(per I/O)

IOUT

25

mA

Storage Temperature

TSTR

-55 to 125

°C

Maxmum Junction Temperature

TJ

110

°C

Maxmum Power Dissipation

PD

3.0

W

DC CHARACTERISTICS

NOTE :1. Minimum cycle. IOUT=0mA.

2. 50% read cycles.

3. |IOH|=(VDDQ/2)/(RQ/5)

±15% @VOH=VDDQ/2 for 175Ω ≤ RQ ≤ 300Ω.

4. |IOL|=(VDDQ/2)/(RQ/5)

±15% @VOL=VDDQ/2 for 175Ω ≤ RQ ≤ 300Ω.

Parameter

Symbol

Min

Max

Unit

Note

Average Power Supply Operating Current(x36)

(Cycle time = tKHKH min)

IDD40

IDD37

IDD33

-

960

940

900

mA

1,2

Average Power Supply Operating Current(x18)

(Cycle time = tKHKH min)

IDD40

IDD37

IDD33

-

910

890

850

mA

1,2

Stop Clock Standby Current

(VIN=VDD-0.2V or 0.2V fixed, K=Low, K=High)

ISB1

-

300

mA

1

Input Leakage Current

(VIN=VSS or VDDQ)

ILI

-3

3

µA

Output Leakage Current

(VOUT=VSS or VDDQ)

ILO

-5

5

µA

Output High Voltage(Programmable Impedance Mode)

VOH1

VDDQ/2

VDDQ

V3

Output Low Voltage(Programmable Impedance Mode)

VOL1

VSS

VDDQ/2

V

4

Output High Voltage(IOH=-0.1mA)

VOH2

VDDQ-0.2

VDDQ

V

Output Low Voltage(IOL=0.1mA)

VOL2

VSS

0.2

V

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