IDT71T016SA datasheet(3/9 Pages) IDT

Part #	IDT71T016SA

Description	2.5V CMOS Static RAM 1 Meg (64K x 16-Bit)

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Manufacturer	IDT [Integrated Device Technology]

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IDT71T016SA, 2.5V CMOS Static RAM

1 Meg (64K x 16-Bit)

Commercial and Industrial Temperature Ranges

Parameter

71T016SA10

71T016SA12

71T016SA15

71T016SA20

Symbol

Com'l

Ind

Com'l

Ind

Com'l

Ind

Unit

ICC

Dynamic Operating Current

CS < VLC, Outputs Open, VDD = Max., f = fMAX(3)

Max.

160

150

160

130

120

mA

Typ.(4)

90

85

____

80

____

80

____

ISB

Dynamic Standby Power Supply Current

CS > VHC, Outputs Open, VDD = Max., f = fMAX(3)

45

40

45

35

30

mA

ISB1

Full Standby Power Supply Current (static)

CS > VHC, Outputs Open, VDD = Max., f = 0(3)

10

15

mA

5326 tbl 8

Absolute Maximum Ratings(1)

Recommended Operating

Temperature and Supply Voltage

DC Electrical Characteristics

(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)

Capacitance

(TA = +25°C, f = 1.0MHz)

Recommended DC Operating

Conditions

DC Electrical Characteristics(1,2)

(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)

NOTE:

1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause

permanent damage to the device. This is a stress rating only and functional operation

of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating

conditions for extended periods may affect reliability.

NOTE:

1. This parameter is guaranteed by device characterization, but not production tested.

NOTES:

1. All values are maximum guaranteed values.

2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).

3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .

4. Typical values are measured at 2.5V, 25°C and with equal read and write cycles. This parameter is guaranteed by device characterization but is not production

tested.

Symbol

Rating

Value

Unit

VDD

Supply Voltage Relative

to VSS

–0.3 to +3.6

V

VIN, VOUT

Terminal Voltage Relative

to VSS

–0.3 to VDD+0.3

V

TBIAS

Temperature Under Bias

–55 to +125

oC

TSTG

Storage Temperature

–55 to +125

oC

PT

Power Dissipation

1.25

W

IOUT

DC Output Current

50

mA

5326 tbl 03

Grade

Temperature

VSS

VDD

Commercial

0°C to +70°C

0V

See Below

Industrial

-40°C to +85°C

0V

See Below

5326 tbl 04

Symbol

Parameter

Min.

Typ.

Max.

Unit

VDD

Supply Voltage

2.375

2.5

2.625

V

Vss

Ground

0

V

VIH

Input High Voltage

1.7

____

VDD+0.3(1)

V

VIL

Input Low Voltage

–0.3(2)

____

0.7

V

5326 tbl 05

Symbol

Parameter(1)

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 3dV

6

pF

CI/O

I/O Capacitance

VOUT = 3dV

7

pF

5326 tbl 06

Symbol

Parameter

Test Condition

IDT71T016SA

Unit

Min.

Max.

|ILI|

Input Leakage Current

VDD = Max., VIN = VSS to VDD

___

5µ A

|ILO|

Output Leakage Current

VDD = Max.,

CS = VIH, VOUT = VSS to VDD

___

5µ A

VOL

Output Low Voltage

IOL = 2.0mA, VDD = Min.

___

0.7

V

VOH

Output High Voltage

IOH = 2.0mA, VDD = Min.

1.7

___

V

5326 tbl 07

NOTES:

1. VIH (max) = VDD + 1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once

per cycle.

2. VIL (min) = -1.0V a.c. (pulse width less than tCYC/2) for I < 20 mA, once per cycle.

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