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Document No. PU10125EJ01V1DS (1st edition)

Date Published April 2002 CP(K)

Printed in Japan

SILICON POWER MOS FET

NE552R679A

3.0 V OPERATION SILICON RF POWER LD-MOS FET

FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

DATA SHEET

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DESCRIPTION

The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the

transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2

technology (our WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. This device can

deliver 28.0 dBm output power with 60% power added efficiency at 460 MHz under the 3.0 V supply voltage.

FEATURES

• High output power

• High power added efficiency :

• High linear gain

• Surface mount package

: 5.7

× 5.7 × 1.1 mm MAX.

• Single supply

APPLICATIONS

• Family Radio Service

: 3.0 V Handsets

ORDERING INFORMATION

Part Number

Package

Marking

Supplying Form

NE552R679A-T1

79A

AU

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 1 kpcs/reel

NE552R679A-T1A

• 12 mm wide embossed taping

• Gate pin face the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: NE552R679A

Caution Please handle this device at static-free workstation, because this is an electrostatic

sensitive device.