NE552R679A-T1 datasheet(6/9 Pages) NEC

Part #	NE552R679A-T1

Description	3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

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Manufacturer	NEC [NEC]

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Data Sheet PU10125EJ01V1DS

6

NE552R679A

PACKAGE DIMENSIONS

79A (UNIT: mm)

(Bottom View)

3.6±0.2

1.5±0.2

0.8 MAX.

Source

Gate

Drain

0.4±0.15

5.7 MAX.

4.2 MAX.

Source

Gate

Drain

79A PACKAGE RECOMMENDED P.C.B. LAYOUT (UNIT: mm)

1.7

4.0

Gate

Source

Drain

0.5

6.1

0.5

Through Hole: 0.2 × 33

φ

Stop up the hole with a rosin or

something to avoid solder flow.

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