K6T1008V2C-RB10 datasheet(8/11 Pages) SAMSUNG

Part #	K6T1008V2C-RB10

Description	128K x8 bit Low Power and Low Voltage CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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8 / 11 page

K6T1008V2C, K6T1008U2C Family

CMOS SRAM

Revision 2.0

November 1997

8

DATA RETENTION WAVE FORM

CS1 controlled

VCC

3.0/2.7V1)

2.2V

VDR

CS1

GND

Data Retention Mode

CS1

≥VCC-0.2V

tSDR

tRDR

TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 Controlled)

Address

CS1

tAW

NOTES (WRITE CYCLE)

1. A write occurs during the overlap of a low CS1, a high CS2 and a low WE. A write begins at the latest transition among CS1 goes low,

CS2 going high and WE going low: A write end at the earliest transition among CS1 going high, CS2 going low and WE going high,

tWP is measured from the beginning of write to the end of write.

2. tCW is measured from the CS1 going low or CS2 going high to the end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change. tWR(1) applied in case a write ends as CS1 or WE going high tWR(2)

applied in case a write ends as CS2 going to low.

CS2

tCW(2)

WE

Data in

Data Valid

Data out

High-Z

tCW(2)

tWR(4)

tWP(1)

tDW

tDH

tAS(3)

tWC

CS2 controlled

VCC

3.0/2.7V1)

0.4V

VDR

CS2

GND

Data Retention Mode

tSDR

tRDR

1. 3.0V for K6T1008V2C Family, 2.7V for K6T1008U2C Family

CS2

≤0.2V

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K6T1008V2C-RB10 Datasheet(PDF) 8 Page - Samsung semiconductor

K6T1008V2C-RB10 Datasheet(HTML) 8 Page - Samsung semiconductor

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