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ZXMP2120G4TA Datasheet(PDF) 3 Page - Zetex Semiconductors |
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ZXMP2120G4TA Datasheet(HTML) 3 Page - Zetex Semiconductors |
3 / 6 page ZXMP2120G4 ISSUE 1 - DECEMBER 2005 3 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS Drain-Source Breakdown Voltage BVDSS -200 V ID=-1mA, VGS=0V Gate-Source Threshold Voltage VGS(th) -1.5 -3.5 V I D =-1mA, VDS=VGS Gate-Body Leakage IGSS 20 nA VGS= 20V, VDS=0V Zero Gate Voltage Drain Current IDSS -10 -100 µA µA VDS=-200 V, VGS=0V VDS=-160 V, VGS=0V, T=125°C (2) On-State Drain Current (1) ID(on) -300 mA VDS=-25 V, VGS=-10V Static Drain-Source On-State Resistance (1) RDS(on) 25 Ω VGS=-10V, ID=-150mA Forward Transconductance (1)(2) gfs 50 mS VDS=-25V, ID=-150mA Input Capacitance (2) Ciss 100 pF Common Source Output Capacitance (2) Coss 25 pF VDS=-25V, VGS=0V, f=1MHz Reverse Transfer Capacitance (2) Crss 7pF Turn-On Delay Time (2)(3) td(on) 7ns VDD -25V, ID=-150mA Rise Time (2)(3) tr 15 ns Turn-Off Delay Time (2)(3) td(off) 12 ns Fall Time (2)(3) tf 15 ns (1) Measured under pulsed conditions. Width=300 µs. Duty cycle ®2% (2) Sample test. (3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator |
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