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ALD110908ASA Datasheet(PDF) 1 Page - Advanced Linear Devices |
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ALD110908ASA Datasheet(HTML) 1 Page - Advanced Linear Devices |
1 / 2 page e EPAD TM ® N A B L E D E ADVANCED LINEAR DEVICES, INC. ORDERING INFORMATION *N/C pins are internally connected. Connect to V- to reduce noise PC, SC PACKAGES PA, SA PACKAGES PIN CONFIGURATION QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY VGS(th)= +0.8V ALD110808/ALD110808A/ALD110908/ALD110908A GENERAL DESCRIPTION ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/ dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications. These MOSFET devices are built on the same monolithic chip, so they exhibit excellent temperature tracking characteristics. They are versatile as circuit elements and are useful design component for a broad range of analog applications. They are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused). All other pins must have voltages within these voltage limits. ALD110808/ALD110908 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and ampli- fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias current, low input capacitance and fast switching speed are desired. As these are MOSFET devices, they feature very large (almost infinite) cur- rent gain in a low frequency, or near DC, operating environment. These devices are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000. FEATURES • Enhancement-mode (normally off) • Standard Gate Threshold Voltages: +0.8V • Matched MOSFET to MOSFET characteristics • Tight lot to lot parametric control • Low input capacitance • VGS(th) match to 2mV and 10mV • High input impedance — 10 12Ω typical • Positive,zero, and negative VGS(th) temperature coefficient • DC current gain >10 8 • Low input and output leakage currents Operating Temperature Range* 0°C to +70°C0°C to +70°C 16-Pin 16-Pin 8-Pin 8Pin Plastic Dip SOIC Plastic Dip SOIC Package Package Package Package ALD110808APC ALD110808ASC ALD110908APA ALD110908ASA ALD110808 PC ALD110808SC ALD110908PA ALD110908SA APPLICATIONS • Precision current mirrors • Precision current sources • Voltage choppers • Differential amplifier input stage • Voltage comparator • Voltage bias circuits • Sample and Hold • Analog inverter • Level shifters • Source followers and buffers • Current multipliers • Analog switches / multiplexers N/C* 1 2 3 14 15 16 4 13 5 12 N/C* 6 7 8 10 11 GN1 DN1 N/C* DN4 N/C* GN4 9 GN3 DN3 DN2 GN2 V+ S34 S12 V- V+ V- ALD110808 M 4 M 3 M 1 M 2 V- V- V- V- V- GN1 DN1 N/C* S12 DN2 GN2 ALD110908 1 2 3 6 7 8 4 5 M 1 M 2 V- N/C* V- V- Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286 www.aldinc.com * Contact factory for industrial or military temp. ranges or user-specified threshold voltage values. |
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