e

EPAD

TM

®

N A

B L

E D

E

ORDERING INFORMATION

*N/C pins are internally connected.

Connect to V- to reduce noise

PC, SC PACKAGES

PA, SA PACKAGES

PIN CONFIGURATION

QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD®

MATCHED PAIR MOSFET ARRAY

ALD110808/ALD110808A/ALD110908/ALD110908A

GENERAL DESCRIPTION

ALD110808A/ALD110808/ALD110908A/ALD110908 are monolithic quad/

dual N-Channel MOSFETs matched at the factory using ALD’s proven

EPAD® CMOS technology. These devices are intended for low voltage,

small signal applications.

These MOSFET devices are built on the same monolithic chip, so they

exhibit excellent temperature tracking characteristics. They are versatile

as circuit elements and are useful design component for a broad range of

analog applications. They are basic building blocks for current sources,

differential amplifier input stages, transmission gates, and multiplexer

applications. For most applications, connect V- and N/C pins to the most

negative voltage potential in the system and V+ pin to the most positive

voltage potential (or left open unused). All other pins must have voltages

within these voltage limits.

ALD110808/ALD110908 devices are built for minimum offset voltage and

differential thermal response, and they are suited for switching and ampli-

fying applications in +1.0V to +10V (+/- 5 V) systems where low input bias

current, low input capacitance and fast switching speed are desired. As

these are MOSFET devices, they feature very large (almost infinite) cur-

rent gain in a low frequency, or near DC, operating environment.

These devices are suitable for use in precision applications which require

very high current gain, beta, such as current mirrors and current sources.

The high input impedance and the high DC current gain of the Field Effect

Transistors result from extremely low current loss through the control gate.

The DC current gain is limited by the gate input leakage current, which is

specified at 30pA at room temperature. For example, DC beta of the

device at a drain current of 3mA and input leakage current of 30pA at

25°C is = 3mA/30pA = 100,000,000.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +0.8V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• High input impedance — 10

• DC current gain >10

8

• Low input and output leakage currents

Operating Temperature Range*

0°C to +70°C0°C to +70°C

16-Pin

16-Pin

8-Pin

8Pin

Plastic Dip

SOIC

Plastic Dip

SOIC

Package

Package

Package

Package

ALD110808APC

ALD110808ASC ALD110908APA ALD110908ASA

ALD110808 PC

ALD110808SC

ALD110908PA

ALD110908SA

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stage

• Voltage comparator

• Voltage bias circuits

• Sample and Hold

• Analog inverter

• Level shifters

• Source followers and buffers

• Current multipliers

• Analog switches / multiplexers

N/C*

1

2

3

14

15

16

4

13

5

12

N/C*

6

7

8

10

11

N/C*

N/C*

9

ALD110808

M 4

M 3

M 1

M 2

V-

N/C*

ALD110908

1

2

3

6

7

8

4

5

M 1

M 2

V-

N/C*

V-

V-

Rev 1.0-0506 ©2 005 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089-1706 Tel: (408) 747-1155 Fax: (408) 747-1286

www.aldinc.com

* Contact factory for industrial or military temp. ranges or user-specified threshold voltage values.