WCSS0418V1F

Document #: 38-05245 Rev. **

Page 7 of 18

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature ...................................–65°C to +150°C

Ambient Temperature with

Power Applied...............................................–55°C to +125°C

DC Voltage Applied to Outputs

Current into Outputs (LOW) ........................................ 20 mA

Static Discharge Voltage .......................................... >2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current .................................................... >200 mA

Write Cycle Descriptions[1, 2, 3, 4]

Function

GW

BWE

Read

1

1

X

X

Read

1

011

1

010

1

001

Write All Bytes

1

0

0

0

Write All Bytes

0

X

X

X

Operating Range

Range

Ambient

Temperature[6]

Com’l

0°C to +70°C

3.135V to 3.6V

Ind’l

–40°C +70°C

Parameter

Description

Test Conditions

7C1325B

Unit

Min.

Max.

Output HIGH Voltage

2.4

V

2.0

V

Output LOW Voltage

0.4

V

0.7

V

Input HIGH Voltage

2.0

0.3V

V

Input HIGH Voltage

1.7

0.3V

V

Input LOW Voltage[5]

–0.3

0.8

V

Input LOW Voltage[5]

–0.3

0.7

V

Input Load Current

(except ZZ and MODE)

GND

≤ V

−11

µA

Input Current of MODE

–30

µA

5

µA

Input Current of ZZ

–5

µA

30

µA

Output Leakage Current

GND

≤ V

–5

5

µA

Notes:

4.

When a write cycle is detected, all I/Os are three-stated, even during byte writes.

5.

Minimum voltage equals –2.0V for pulse durations of less than 20 ns.

6.