ADVANCE INFORMATION

8Mb (512K x 16) Pseudo Static RAM

WCMC8016V9X

WeidaSemiconductor, Inc.

38-14026

Revised August 2003

Features

• Wide voltage range: 2.70V–3.30V

• Access Time: 70ns

• Ultra-low active power

— Typical active current: 2.0mA @ f = 1 MHz

• Ultra low standby power

• Automatic power-down when deselected

• CMOS for optimum speed/power

• Offered in a 48 Ball BGA Package

The WCMC8016V9X is a high-performance CMOS pseudo

static RAM organized as 512K words by 16 bits that supports

an asynchronous memory interface. This device features

advanced circuit design to provide ultra-low active current.

This is ideal for providing More Battery Life

®

(MoBL

portable applications such as cellular telephones. The device

can be put into standby mode reducing power consumption by

during a write operation (Chip Enabled and Write Enable WE

LOW). The device also has an automatic power-down feature

that significantly reduces power consumption by 99% when

addresses are not toggling even when the chip is selected

LOW). Reading from the device is accomplished by asserting

Enable (OE) LOW while forcing the Write Enable (WE) HIGH.

If Byte Low Enable (BLE) is LOW, then data from the memory

complete description of read and write modes

Logic Block Diagram

Note:

1.

For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress .com.

512K x 16

RAM Array

COLUMN DECODER

DATA IN DRIVERS

OE

WE

BLE

BHE

Power

Circuit

CE

1T