256K x 18 Synchronous-Pipelined Cache Tag RAM
CY7C1359A/GVT71256T18
Cypress Semiconductor Corporation
•
3901 North First Street
•
San Jose
•
CA 95134
•
408-943-2600
Document #: 38-05120 Rev. **
Revised September 13, 2001
327
Features
• Fast match times: 3.5, 3.8, 4.0 and 4.5 ns
• Fast clock speed: 166, 150, 133, and 100 MHz
•Fast OE access times: 3.5, 3.8, 4.0 and 5.0 ns
• Pipelined data comparator
• Data input register load control by DEN
• Optimal for depth expansion (one cycle chip deselect
to eliminate bus contention)
• 3.3V –5% and +10% core power supply
• 2.5V or 3.3V I/O supply
• 5V tolerant inputs except I/Os
• Clamp diodes to VSS at all inputs and outputs
• Common data inputs and data outputs
• JTAG boundary scan
• Byte Write Enable and Global Write control
• Three chip enables for depth expansion and address
pipeline
• Address, data, and control registers
• Internally self-timed Write Cycle
• Burst control pins (interleaved or linear burst se-
quence)
• Automatic power-down for portable applications
• Low-profile JEDEC standard 100-pin TQFP package
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low power CMOS designs using advanced tri-
ple-layer polysilicon, double-layer metal technology. Each
memory cell consists of four transistors and two high valued
resistors.
All synchronous inputs are gated by registers controlled by a
positive-edge-triggered Clock Input (CLK). The synchronous
inputs include all addresses, all data inputs, address-pipelin-
ing Chip Enable (CE), depth-expansion Chip Enables (CE2
and CE2), Burst Control Inputs (ADSC, ADSP, and ADV), Write
Enables (WEL, WEH, and BWE), Global Write (GW), and Data
Input Enable (DEN).
Asynchronous inputs include the Burst Mode Control (MODE),
the Output Enable (OE) and the Match Output Enable (MOE).
The data outputs (Q) and Match Output (MATCH), enabled by
OE and MOE respectively, are also asynchronous.
Addresses and chip enables are registered with either Ad-
dress Status Processor (ADSP) or Address status Controller
(ADSC) input pins. Subsequent burst addresses can be inter-
nally generated as controlled by the Burst Advance pin (ADV).
Data inputs are registered with Data Input Enable (DEN) and
chip enable pins (CE, CE2, and CE2). The outputs of the data
input registers are compared with data in the memory array
and a match signal is generated. The match output is gated
into a pipeline register and released to the match output pin at
the next rising edge of Clock (CLK).
Address, data inputs, and write controls are registered on-chip
to initiate self-timed WRITE cycle. WRITE cycles can be one
to two bytes wide as controlled by the write control inputs. In-
dividual byte write allows individual byte to be written. WEL
controls DQ1–DQ9. WEH controls DQ10–DQ18. WEL and
WEH can be active only with BWE being LOW. GW being LOW
causes all bytes to be written.
The CY7C1359C/GVT71256T18 operates from a +3.3V pow-
er supply with output power supply being +2.5V or +3.3V. All
inputs and outputs are LVTTL compatible. The device is ideally
suited for address tag RAM for up to 8 MB secondary cache.
Selection Guide
7C1359A-166
71256T36-6
7C1359A-150
71256T36-6.7
7C1359A-133
71256T36-7.5
7C1359A-100
71256T36-10
Maximum Access Time (ns)
3.5
3.8
4.0
4.5
Maximum Operating Current (mA)
310
275
250
190
Maximum CMOS Standby Current (mA)
20
20
20
20
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