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ZXMN0545G4 Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZXMN0545G4 Datasheet(HTML) 2 Page - Zetex Semiconductors |
2 / 6 page ZXMN0545G4 ISSUE 1 - JANUARY 2006 2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 450 V Gate Source Voltage VGS 20 V Continuous Drain Current (VGS=10V; Tamb=25°C) (a) ID 140 mA Pulsed Drain Current (c) IDM 600 mA Continuous Source Current (Body Diode) (b) IS 140 A Pulsed Source Current (Body Diode) (c) ISM 600 A Power Dissipation at Tamb=25°C (a) Linear derating factor Ptot 2.0 1.6 W mW/°C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) RθJA 62.5 °C/W Junction to Ambient (b) RθJA 32 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. |
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