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AO6415L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AO6415L
Description  P-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO6415L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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AO6415
Symbol
Min
Typ
Max
Units
BVDSS
-20
V
-0.003
-0.5
TJ=55°C
-2.5
±1
µA
±10
µA
VGS(th)
-0.6
-0.9
-1.4
ID(ON)
-20
A
62
75
TJ=125°C
84
105
80
100
m
115
150
m
gFS
7S
VSD
-0.65
-0.82
-1
V
IS
-1.5
A
Ciss
512
620
pF
Coss
77
pF
Crss
62
pF
Rg
9.2
13
Qg
4.9
6
nC
Qgs
0.8
nC
Qgd
1.2
nC
tD(on)
11
13
ns
tr
810
ns
tD(off)
34
41
ns
tf
12
15
ns
trr
13
17
ns
Qrr
46
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IF=-2A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=-250µA, VGS=0V
VGS=-2.5V, ID=-1A
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-3.3A
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
IDSS
µA
Gate Threshold Voltage
VDS=VGS ID=-250µA
VDS=-16V, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=-4.5V, ID=-2A
IS=-1A,VGS=0V
VDS=-5V, ID=-3.3A
IF=-2A, dI/dt=100A/µs
VGS=0V, VDS=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, VDS=-10V, ID=-2A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=-4.5V, VDS=-10V, RL=5Ω,
RGEN=3Ω
VDS=0V, VGS=±12V
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
m
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
Rev 0 : Nov 2005
Alpha & Omega Semiconductor, Ltd.


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