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AO4914A Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors |
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AO4914A Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors |
6 / 8 page AO4914A Symbol Min Typ Max Units BVDSS 30 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1 1.7 3 V ID(ON) 30 A 14.8 18 TJ=125°C 22 27 20.6 28 m Ω gFS 23 S VSD 0.75 1 V IS 3A Ciss 955 1250 pF Coss 145 pF Crss 112 pF Rg 0.5 0.85 Ω Qg(10V) 17 24 nC Qg 912 nC Qgs 3.4 nC Qgd 4.7 nC tD(on) 5 6.5 ns tr 6 7.5 ns tD(off) 19 25 ns tf 4.5 6 ns trr Body Diode Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 16.7 21 ns Qrr Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.7 10 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Q2 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V µA Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA On state drain current VGS=10V, VDS=5V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A m Ω VGS=4.5V, ID=6A Maximum Body-Diode+Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=15V, f=1MHz Output Capacitance Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω VGS=10V, VDS=15V, ID=8.5A Total Gate Charge Gate resistance VGS=0V, VDS=0V, f=1MHz Forward Transconductance VDS=5V, ID=8.5A Diode+Schottky Forward Voltage IS=1A A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005 Alpha & Omega Semiconductor, Ltd. |
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