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AO4914A Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors

Part # AO4914A
Description  Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4914A Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors

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AO4914A
Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
TJ=55°C
5
IGSS
100
nA
VGS(th)
1
1.7
3
V
ID(ON)
30
A
14.8
18
TJ=125°C
22
27
20.6
28
m
gFS
23
S
VSD
0.75
1
V
IS
3A
Ciss
955
1250
pF
Coss
145
pF
Crss
112
pF
Rg
0.5
0.85
Qg(10V)
17
24
nC
Qg
912
nC
Qgs
3.4
nC
Qgd
4.7
nC
tD(on)
5
6.5
ns
tr
6
7.5
ns
tD(off)
19
25
ns
tf
4.5
6
ns
trr
Body Diode Reverse Recovery Time
IF=8.5A, dI/dt=100A/µs
16.7
21
ns
Qrr
Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs
6.7
10
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT
DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
IDSS
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
µA
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
On state drain current
VGS=10V, VDS=5V
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=8.5A
m
VGS=4.5V, ID=6A
Maximum Body-Diode+Schottky Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
VGS=0V, VDS=15V, f=1MHz
Output Capacitance
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=3Ω
VGS=10V, VDS=15V, ID=8.5A
Total Gate Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Forward Transconductance
VDS=5V, ID=8.5A
Diode+Schottky Forward Voltage
IS=1A
A: The value of RθJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The
SOA curve provides a single pulse rating.
Rev 0 : Aug 2005
Alpha & Omega Semiconductor, Ltd.


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