AO4912

Symbol

Units

Symbol

Units

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Maximum Junction-to-Lead

C

Steady-State

71

32

47.5

62.5

Maximum Junction-to-Ambient

A

t ≤ 10s

Maximum Junction-to-Ambient

A

Steady-State

110

110

Maximum Junction-to-Lead

C

Steady-State

35

Typ

Maximum Junction-to-Ambient

A

Steady-State

Parameter: Thermal Characteristics MOSFET Q1

Maximum Junction-to-Ambient

A

t ≤ 10s

40

Thermal Characteristics Schottky

62.5

40

48

74

62.5

°C/W

Maximum Junction-to-Ambient

A

Steady-State

Max

°C/W

°C/W

Parameter: Thermal Characteristics MOSFET Q2

Typ

Max

Maximum Junction-to-Ambient

A

t ≤ 10s

48

74

110

Maximum Junction-to-Lead

C

Steady-State

35

40

value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

rating.

B: Repetitive rating, pulse width limited by junction temperature.

D. The static characteristics in Figures 1 to 6 are obtained using 80

µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

SOA curve provides a single pulse rating.

Rev 4: Aug 2005

Alpha & Omega Semiconductor, Ltd.