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AO4912 Datasheet(PDF) 6 Page - Alpha & Omega Semiconductors |
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AO4912 Datasheet(HTML) 6 Page - Alpha & Omega Semiconductors |
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6 / 8 page  AO4912 Symbol Min Typ Max Units BVDSS 30 V 0.007 0.05 3.2 10 12 20 IGSS 100 nA VGS(th) 1 1.8 3 V ID(ON) 30 A 13.8 17 TJ=125°C 20 24 19.7 25 m Ω gFS 23 S VSD 0.45 0.5 V IS 3.5 A Ciss 971 1165 pF Coss 190 pF Crss 110 pF Rg 0.7 0.85 Ω Qg(10V) 19.2 23 nC Qg 9.36 11.2 nC Qgs 2.6 nC Qgd 4.2 nC tD(on) 5.2 7.5 ns tr 4.4 6.5 ns tD(off) 17.3 25 ns tf 3.3 5 ns trr Body Diode + Schottky Reverse Recovery Time IF=8.5A, dI/dt=100A/µs 19.3 23 ns Qrr Body Diode + Schottky Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 9.4 11 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current. (Set by Schottky leakage) VR=30V VR=30V, TJ=125°C VR=30V, TJ=150°C mA Gate-Body leakage current VDS=0V, VGS= ±20V m Ω Gate Threshold Voltage VDS=VGS ID=250µA On state drain current VGS=4.5V, VDS=5V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=8.5A VGS=4.5V, ID=7A Maximum Body-Diode+Schottky Continuous Current DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=15V, f=1MHz Output Capacitance (FET + Schottky) Forward Transconductance VDS=5V, ID=8.5A Diode+Schottky Forward Voltage IS=1A Turn-Off Fall Time Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=8.5A Total Gate Charge Turn-On Rise Time Turn-Off DelayTime A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 4 : Aug 2005 Alpha & Omega Semiconductor, Ltd. |
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