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AO4826L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO4826L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 4 page AO4826 Symbol Min Typ Max Units BVDSS 60 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 1 2.1 3 V ID(ON) 40 A 20 25 TJ=125°C 34 42 22 30 m Ω gFS 27 S VSD 0.74 1 V IS 3A Ciss 1920 2300 pF Coss 155 pF Crss 116 pF Rg 0.65 0.8 Ω Qg(10V) 47.6 58 nC Qg(4.5V) 24.2 30 nC Qgs 6nC Qgd 14.4 nC tD(on) 7.6 ns tr 5ns tD(off) 28.9 ns tf 5.5 ns trr 33.2 40 ns Qrr 43 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=6.3A Reverse Transfer Capacitance IF=6.3A, dI/dt=100A/µs Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Gate Threshold Voltage VDS=VGS ID=250µA VDS=48V, VGS=0V VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage m Ω VGS=4.5V, ID=5.7A IS=1A,VGS=0V VDS=5V, ID=6.3A Total Gate Charge Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=30V, RL=4.7Ω, RGEN=3Ω Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=10V, VDS=30V, ID=6.3A Total Gate Charge Gate Drain Charge VGS=0V, VDS=30V, f=1MHz SWITCHING PARAMETERS A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4 : Aug 2005 Alpha & Omega Semiconductor, Ltd. |
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