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AO4807L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AO4807L
Description  Dual P-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AO4807L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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background image
Symbol
VDS
VGS
IDM
TJ, TSTG
Symbol
Typ
Max
48
62.5
74
110
RθJL
35
40
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Maximum
Units
V
Gate-Source Voltage
±20
V
ID
-6
Drain-Source Voltage
-30
TA=25°C
PD
2
A
TA=70°C
-5
Pulsed Drain Current
B
-30
Continuous Drain
Current
A
TA=25°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
TA=70°C
1.44
Junction and Storage Temperature Range
-55 to 150
°C
Power Dissipation
A
Maximum Junction-to-Lead
C
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
AO4807
Dual P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -30V
ID = -6 A (VGS = -10V)
RDS(ON) < 35mΩ (VGS = -10V)
RDS(ON) < 58mΩ (VGS = -4.5V)
General Description
The AO4807 uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. Standard Product
AO4807 is Pb-free (meets ROHS & Sony 259
specifications). AO4807L is a Green Product ordering
option. AO4807 and AO4807L are electrically
identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
SOIC-8
G1
D1
S1
G2
D2
S2


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