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AO9926B Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AO9926B Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 4 page Symbol VDS VGS IDM TJ, TSTG Symbol Typ Max 48 62.5 74 110 RθJL 35 50 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±12 Gate-Source Voltage Drain-Source Voltage 20 Continuous Drain Current A Maximum Units Parameter TA=25°C TA=70°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V 6.1 30 Pulsed Drain Current B Power Dissipation A TA=25°C Junction and Storage Temperature Range A PD °C 2 1.28 -55 to 150 TA=70°C ID 7.6 AO9926B Dual N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = 20V ID = 7.6 A (VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 34mΩ (VGS = 2.5V) RDS(ON) < 52mΩ (VGS = 1.8V) General Description The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch. Standard Product AO9926B is Pb-free (meets ROHS & Sony 259 specifications). AO9926BL is a Green Product ordering option. AO9926B and AO9926BL are electrically identical. G1 S1 G2 S2 D1 D1 D2 D2 1 2 3 4 8 7 6 5 SOIC-8 G1 D1 S1 G2 D2 S2 Alpha & Omega Semiconductor, Ltd. |
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