AO9926B datasheet(1/4 Pages) AOSMD

Part #	AO9926B

Description	Dual N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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Symbol

VDS

VGS

IDM

TJ, TSTG

Symbol

Typ

Max

48

62.5

74

110

RθJL

35

50

W

Maximum Junction-to-Lead

C

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t ≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A

Steady-State

°C/W

±12

Gate-Source Voltage

Drain-Source Voltage

20

Continuous Drain

Current

A

Maximum

Units

Parameter

TA=25°C

TA=70°C

Absolute Maximum Ratings TA=25°C unless otherwise noted

V

6.1

30

Pulsed Drain Current

B

Power Dissipation

A

TA=25°C

Junction and Storage Temperature Range

A

PD

°C

2

1.28

-55 to 150

TA=70°C

ID

7.6

AO9926B

Dual N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 20V

ID = 7.6 A (VGS = 10V)

RDS(ON) < 23mΩ (VGS = 10V)

RDS(ON) < 26mΩ (VGS = 4.5V)

RDS(ON) < 34mΩ (VGS = 2.5V)

RDS(ON) < 52mΩ (VGS = 1.8V)

General Description

The AO9926B uses advanced trench technology to

provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 1.8V while

retaining a 12V VGS(MAX) rating. This device is suitable

for use as a uni-directional or bi-directional load

switch. Standard Product AO9926B is Pb-free (meets

ROHS & Sony 259 specifications). AO9926BL is a

Green Product ordering option. AO9926B and

AO9926BL are electrically identical.

G1

S1

G2

S2

D1

D2

1

2

3

4

8

7

6

5

SOIC-8

G1

D1

S1

G2

D2

S2

Alpha & Omega Semiconductor, Ltd.

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AO9926B Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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