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AON4602 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON4602 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 7 page AON4602 Symbol Min Typ Max Units BVDSS 20 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 0.4 0.7 1 V ID(ON) 15 A 41 50 TJ=125°C 58 70 52 63 m Ω 67 87 m Ω gFS 11 S VSD 0.8 1 V IS 2A Ciss 436 pF Coss 66 pF Crss 44 pF Rg 3 Ω Qg 6.2 nC Qgs 1.6 nC Qgd 0.5 nC tD(on) 5.5 ns tr 6.3 ns tD(off) 40 ns tf 12.7 ns trr 12.3 ns Qrr 3.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/μs Drain-Source Breakdown Voltage On state drain current ID=250μA, VGS=0V VGS=4.5V, VDS=5V VGS=4.5V, ID=4.2A Reverse Transfer Capacitance IF=4A, dI/dt=100A/μs n-channel Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS μA Gate Threshold Voltage VDS=VGS ID=250μA VDS=16V, VGS=0V VDS=0V, VGS=±8V Zero Gate Voltage Drain Current Gate-Body leakage current RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage m Ω VGS=2.5V, ID=3.7A IS=1A,VGS=0V VDS=5V, ID=4.2A VGS=1.8V, ID=3.2A Turn-On Rise Time Turn-Off DelayTime VGS=5V, VDS=10V, RL=2.7Ω, RGEN=6Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge VGS=4.5V, VDS=10V, ID=4.2A Gate Source Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS VGS=0V, VDS=10V, f=1MHz Gate Drain Charge A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 μs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev0 : Jan. 2006 Alpha & Omega Semiconductor, Ltd. |
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