AOL1432

Symbol

Min

Typ

Max

Units

25

V

1

5

100

nA

1

1.8

3

V

100

A

6.5

8.5

9.5

12

11.5

14

m

Ω

35

S

0.72

1

V

55

A

1430

1716

pF

319

pF

215

pF

1.2

2

Ω

26.4

32

nC

13.5

nC

3.9

nC

7.75

nC

6.5

ns

10

ns

22.7

ns

6.2

ns

23.06

27.5

ns

15.25

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev3:July 2005

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

Reverse Transfer Capacitance

SWITCHING PARAMETERS

STATIC PARAMETERS

Parameter

Conditions

μA

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

Static Drain-Source On-Resistance

m

Ω

Gate resistance

Turn-Off Fall Time

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Total Gate Charge

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

dissipation limit for cases where additional heatsinking is used.

E. The static characteristics in Figures 1 to 6 are obtained using <300

μs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

G. Surface mounted on a 1 in

H. These tests are performed with the device mounted on 1 in

curve provides a single pulse rating.

Alpha & Omega Semiconductor, Ltd.