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AOD603L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOD603L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 9 page  Symbol Max p-channel Units VDS V VGS V IDM IAR A EAR mJ TJ, TSTG °C Thermal Characteristics: n-channel and p-channel Symbol Device Typ Max n-ch 17.4 30 °C/W n-ch 50 60 °C/W RθJC n-ch 4 7.5 °C/W p-ch 16.7 25 °C/W p-ch 40 50 °C/W RθJC p-ch 2.5 4 °C/W RθJA Maximum Junction-to-Ambient A Maximum Junction-to-Case B Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s 60 12 12 23 20 Avalanche Current C Pulsed Drain Current C -60 ±20 Drain-Source Voltage ±20 Gate-Source Voltage Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Repetitive avalanche energy L=0.1mH C W 10 37.5 18.8 Continuous Drain Current G TC=25°C ID TC=100°C RθJA Maximum Junction-to-Ambient A Steady-State 23 TC=100°C Power Dissipation B TC=25°C PD Steady-State Junction and Storage Temperature Range Maximum Junction-to-Case B Steady-State Maximum Junction-to-Ambient A t ≤ 10s -55 to 175 Power Dissipation A TA=25°C PDSM TA=70°C 2.5 2 1.6 30 1.3 12 -55 to 175 -30 -12 A W -10 -12 AOD603 Complementary Enhancement Mode Field Effect Transistor Features n-channel p-channel VDS (V) = 60V -60V ID = 12A (VGS=10V) -12A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115m Ω (VGS = - 10V) < 85m Ω (VGS=4.5V) < 150m Ω (VGS = -4.5V) General Description The AOD603 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOD603 is Pb-free (meets ROHS & Sony 259 specifications). AOD603L is a Green Product ordering option. AOD603 and AOD603L are electrically identical. G2 D2 S2 G1 D1 S1 n-channel p-channel S1 G1 D1/D2 G2 S2 TO-252 D-PAK Top View Drain Connected to Tab Alpha & Omega Semiconductor, Ltd. |
Similar Part No. - AOD603L |
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Similar Description - AOD603L |
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