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AOD407 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOD407
Description  P-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD407 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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background image
Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol
Typ
Max
16.7
25
40
50
RθJC
2.5
3
°C
V
V
±20
25
A
-12
23
50
Gate-Source Voltage
Drain-Source Voltage
-60
Pulsed Drain Current
C
-12
-10
-30
Avalanche Current
C
Continuous Drain
Current
G
Maximum
Units
Parameter
TC=25°C
TC=100°C
Absolute Maximum Ratings TA=25°C unless otherwise noted
ID
PDSM
2.5
A
Repetitive avalanche energy L=0.1mH
C
mJ
Power Dissipation
B
TC=25°C
PD
W
TC=100°C
Maximum Junction-to-Ambient
A
Steady-State
°C/W
W
TA=70°C
1.6
Junction and Storage Temperature Range
-55 to 175
Power Dissipation
A
TA=25°C
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Units
Maximum Junction-to-Ambient
A
t ≤ 10s
RθJA
°C/W
AOD407
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -60V
ID = -12A (VGS = -10V)
RDS(ON) < 115mΩ (VGS = -10V)
RDS(ON) < 150mΩ (VGS = -4.5V)
100% UIS tested
100% RG tested
General Description
The AOD407 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
-RoHS Compliant
-Halogen Free*
G
D
S
TO252
DPAK
Top View
Bottom View
G
S
D
G
S
D
Alpha & Omega Semiconductor, Ltd.
万和兴电子有限公司 www.whxpcb.com


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