AOD406

Symbol

Min

Typ

Max

Units

30

V

0.005

1

5

100

nA

0.8

1.1

1.5

V

100

A

45

5.8

7

4.6

5.7

m

Ω

102

S

0.64

1

V

85

A

9130

10500

pF

625

pF

387

pF

0.4

0.5

Ω

72.4

85

nC

13.4

nC

16.8

nC

14.7

22

ns

14.2

21

ns

105.5

150

ns

23.5

35

ns

30.5

40

ns

21

33

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Gate Drain Charge

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Turn-On DelayTime

m

Ω

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

µA

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

On state drain current

Reverse Transfer Capacitance

application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in

curve provides a single pulse rating.

G. The maximum current rating is limited by the package current capability. Rev 1: Sept 2005

Alpha & Omega Semiconductor, Ltd.