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AOB434 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOB434 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max 11 17 42 50 RθJC 2.4 3 W TA=70°C 2.1 Power Dissipation A TA=25°C PDSM 3 Repetitive avalanche energy L=0.1mH C 135 A mJ Junction and Storage Temperature Range A PD °C 50 25 -55 to 175 TC=100°C Avalanche Current C 30 ID 55 55 100 Pulsed Drain Current C Power Dissipation B TC=25°C Continuous Drain Current G Maximum Units Parameter TC=25°C TC=100°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V ±20 Gate-Source Voltage Drain-Source Voltage 25 °C/W Maximum Junction-to-Ambient A Steady-State °C/W W Maximum Junction-to-Case B Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s RθJA AOB434 N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) =25V ID = 55 A (VGS = 10V) RDS(ON) < 9.5 mΩ (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 4.5V) General Description The AOB434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB434 is Pb-free (meets ROHS & Sony 259 specifications). AOB434L is a Green Product ordering option. AOB434 and AOB434L are electrically identical. G D S G D S TO-263 D2-PAK Top View Drain Connected to Tab Alpha & Omega Semiconductor, Ltd. |
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