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AOU408 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOU408 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AOU408 Symbol Min Typ Max Units BVDSS 105 V 1 TJ=55°C 5 IGSS 100 nA VGS(th) 2.5 3.2 4 V ID(ON) 100 A 21.5 28 TJ=125°C 32 40 24 31 m Ω gFS 50 S VSD 0.73 1 V IS 55 A Ciss 2038 2445 pF Coss 204 pF Crss 85 pF Rg 1.3 1.56 Ω Qg(10V) 38.5 46 nC Qgs 8nC Qgd 10 nC tD(on) 12.7 ns tr 8.2 ns tD(off) 31.5 ns tf 11.2 ns trr 59.6 74 ns Qrr 161 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage ID=10mA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=84V, VGS=0V µA Gate-Body leakage current VDS=0V, VGS=±25V Gate Threshold Voltage VDS=VGS, ID=250µA On state drain current VGS=10V, VDS=5V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A m Ω VGS=6V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance VGS=0V, VDS=25V, f=1MHz Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=10V, VDS=50V, ID=20A Gate Source Charge Gate Drain Charge Turn-On DelayTime VGS=10V, VDS=50V, RL=2.7Ω, RGEN=3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev2: August 2005 Alpha & Omega Semiconductor, Ltd. |
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