BZT52H-C9V1 datasheet(5/10 Pages) PHILIPS

Part #	BZT52H-C9V1

Description	Single Zener diodes in a SOD123F package

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 10 page

9397 750 15082

Product data sheet

Rev. 01 — 22 December 2005

5 of 10

Philips Semiconductors

BZT52H series

Single Zener diodes in a SOD123F package

[1]

f = 1 MHz; VR =0V

[2]

tp = 100 µs; Tamb =25 °C

[1]

f = 1 MHz; VR =0V

[2]

tp = 100 µs; Tamb =25 °C

Table 9:

Characteristics per type; BZT52H-C27 to BZT52H-C51

Tj =25 °C unless otherwise speciﬁed.

BZT52H

-Cxxx

Working

voltage

VZ (V);

IZ =2mA

Maximum differential

resistance

rdif (Ω)

Reverse

current

IR (µA)

Temperature

coefﬁcient

SZ (mV/K);

IZ =5mA

Diode

capacitance

Cd (pF) [1]

Non-repetitive peak

reverse current

IZSM (A) [2]

Min

Max

IZ =1mA

IZ =5mA

Max

VR (V)

Min

Max

27

25.1

28.9

250

40

0.05

18.9

21.4

25.3

50

1.0

30

28.0

32.0

250

40

0.05

21

24.4

29.4

50

1.0

33

31.0

35.0

250

40

0.05

23.1

27.4

33.4

45

0.9

36

34.0

38.0

250

60

0.05

25.2

30.4

37.4

45

0.8

39

37.0

41.0

300

75

0.05

27.3

33.4

41.2

45

0.7

43

40.0

46.0

325

80

0.05

30.1

37.6

46.6

40

0.6

47

44.0

50.0

325

90

0.05

32.9

42.0

51.8

40

0.5

51

48.0

54.0

350

100

0.05

35.7

46.6

57.2

40

0.4

Table 10:

Characteristics per type; BZT52H-C56 to BZT52H-C75

Tj =25 °C unless otherwise speciﬁed.

BZT52H

-Cxxx

Working

voltage

VZ (V);

IZ =2mA

Maximum differential

resistance

rdif (Ω)

Reverse

current

IR (µA)

Temperature

coefﬁcient

SZ (mV/K);

IZ =5mA

Diode

capacitance

Cd (pF) [1]

Non-repetitive peak

reverse current

IZSM (A) [2]

Min

Max

IZ = 0.5 mA IZ =2mA Max

VR (V)

Min

Max

56

52.0

60.0

375

120

0.05

39.2

52.2

63.8

40

0.3

62

58.0

66.0

400

140

0.05

43.4

58.8

71.6

35

0.3

68

64.0

72.0

400

160

0.05

47.6

65.6

79.8

35

0.25

75

70.0

79.0

400

175

0.05

52.5

73.4

88.6

35

0.20

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