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KSH122I Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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KSH122I Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page ©2002 Fairchild Semiconductor Corporation Rev. A4, October 2002 NPN Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW ≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A IB Base Current 120 mA PC Collector Dissipation (TC=25°C) 20 W Collector Dissipation (Ta=25°C) 1.75 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage IC = 30mA, IB = 0 100 V ICEO Collector Cut-off Current VCE = 50V, IB =0 10 µA ICBO Collector Cut-off Current VCB = 100V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE *DC Current Gain VCE = 4V, IC = 4A VCE = 4V, VEB = 8A 1000 100 12K VCE(sat) *Collector-Emitter Saturation Voltage IC = 4A, IB = 16mA IC = 8A, IB = 80mA 2 4 V V VBE(sat) *Base-Emitter Saturation Voltage IC = 8A, IB = 80mA 4.5 V VBE(on) *Base-Emitter On Voltage VCE = 4V, IC = 4A 2.8 V Cob Output Capacitance VCB = 10V, IE = 0 f= 0.1MHz 200 pF KSH122 D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP122 • Complement to KSH127 Equivalent Circuit B E C R1 R2 R18k Ω ≅ R20.12k Ω ≅ 1.Base 2.Collector 3.Emitter D-PAK I-PAK 11 |
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