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FQPF9N50CF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FQPF9N50CF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQPF9N50CF Rev. A December 2005 FRFET TM FQPF9N50CF 500V N-Channel MOSFET Features • 9A, 500V, RDS(on) = 0.85Ω @VGS = 10 V • Low gate charge (typical 28 nC) • Low Crss (typical 24pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics TO-220F FQPF Series GS D D G S Symbol Parameter FQPF9N50CF Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 9* A - Continuous (TC = 100°C) 5.4* A IDM Drain Current - Pulsed (Note 1) 36* A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 360 mJ IAR Avalanche Current (Note 1) 9A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 44 W - Derate above 25°C 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter FQPF9N50CF Units RθJC Thermal Resistance, Junction-to-Case 2.86 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W * Drain current limited by maximum junction temperature |
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