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HA22012 Datasheet(PDF) 7 Page - Hitachi Semiconductor

Part # HA22012
Description  Low Noise Amplifier for Micro Wave Application
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HA22012 Datasheet(HTML) 7 Page - Hitachi Semiconductor

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HA22012
7
20
15
10
5
0
2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
Power Gain vs. Supply Voltage
f = 1.9 GHz
Ta = +25
°C
4
3
2
1
2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
Noise Figure vs. Supply Voltage
0
2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
2.5
3.0
3.5
4.0
4.5
5.0
Supply Voltage Vdd (V)
6
5
4
3
2
1
20
15
10
5
0
–5
f = 1.9 GHz
Ta = +25
°C
VSWR vs. Supply Voltage
f = 1.9 GHz
Ta = +25
°C
f = 1.9 GHz
Ta = +25
°C
Pout @ 1dB Gain Compression, 3rd Order
Inter–cept Point (out) vs. Supply Voltage
output
input
IP3o
P1dB


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