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HA22012 Datasheet(PDF) 7 Page - Hitachi Semiconductor |
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HA22012 Datasheet(HTML) 7 Page - Hitachi Semiconductor |
7 / 12 page HA22012 7 20 15 10 5 0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Voltage Vdd (V) Power Gain vs. Supply Voltage f = 1.9 GHz Ta = +25 °C 4 3 2 1 2.5 3.0 3.5 4.0 4.5 5.0 Supply Voltage Vdd (V) Noise Figure vs. Supply Voltage 0 2.5 3.0 3.5 4.0 4.5 5.0 Supply Voltage Vdd (V) 2.5 3.0 3.5 4.0 4.5 5.0 Supply Voltage Vdd (V) 6 5 4 3 2 1 20 15 10 5 0 –5 f = 1.9 GHz Ta = +25 °C VSWR vs. Supply Voltage f = 1.9 GHz Ta = +25 °C f = 1.9 GHz Ta = +25 °C Pout @ 1dB Gain Compression, 3rd Order Inter–cept Point (out) vs. Supply Voltage output input IP3o P1dB |
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