3
SY10422-3/4/5/7
SY100422-3/4/5/7
SY101422-3/4/5/7
Parameter
Symbol Min.
Typ.
Max. Unit
Supply Voltage(1)
10K
VEE
–5.46
–5.2
–4.94
V
Case Temperature
TC
0—
75
°C
Supply Voltage(1)
100K
VEE
–4.8
–4.5
–4.2
V
Case Temperature
TC
0—
85
°C
Supply Voltage(1)
101K
VEE
–5.46
–5.2
–4.94
V
Case Temperature
TC
0—
85
°C
NOTE:
1. Referenced to VCC.
FUNCTIONAL DESCRIPTION
The Synergy SY10/100/101422 are 1024-bit RAMs
organized as four 256-by-1-bit blocks with each block having
its own Block Select (BS) control signal that functions
essentially like a unique chip select for the Block. The four
blocks and Block Selects together make the device a 256 x
4-bit RAM. Memory cell selection is achieved by using the
8 address bits designated as A0 through A7. Each of the 28
possible input address combinations corresponds to a unique
word location in memory. The active low Block Select (BS)
control signals are provided for memory expansion and for
independent control of each of the four 256 x 1-bit blocks of
memory. The active low Write Enable (WE) controls the
read and write operation on the selected block or blocks.
Data resident on the DIN inputs (DI0 through DI3) is written
into the addressed location only when WE and the Block
Select (BS) associated with each of the DIN bits is held
LOW. This allows control of the Write operation to any one,
two, three or all four of the input data bits.
In order to
perform a read operation, WE is held high, the Block Select
(BS) associated with each of the four output blocks is held
low, and the non-inverted output data at the addressed
location is transferred to DOUT (DO0 through DO3) to be
read out. This allows control of the Read operation to any
one, two, three or all four of the output blocks. Open emitter
outputs are provided for maximum flexibility and memory
expansion by allowing output wire-OR connections. External
termination of 50
Ω to –2.0V or an equivalent circuit must be
used to provide the specified output levels.
All outputs are forced to a logic LOW level when the
RAM is being written into (WE = LOW).
The output (or
outputs) associated with a block (or blocks) of memory can
be forced to a logic LOW low level by deselecting that block
(or blocks) with its respective Block Select input (BS0 – BS3
= HIGH).
ABSOLUTE MAXIMUM RATINGS(1)
GUARANTEED OPERATING CONDITIONS
Symbol
Rating
Value
Unit
VEE
VEE Pin Potential
+0.5 to –7.0
V
to VCC Pin
VIN
Input Voltage
+0.5 to VEE
V
IOUT
DC Output Current
–30
mA
(Output High)
TC
Temperature Under
–55 to +125
°C
Bias
Tstore
Storage Temperature
–65 to +150
°C
NOTE:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS
are exceeded. This is a stress rating only and functional operation is not
implied at conditions other than those detailed in the operational sections
of this data sheet. Exposure to ABSOLUTE MAXIMUM RATlNG conditions
for extended periods may affect device reliability.
RISE AND FALL TIME
Parameter
Code(1) Symbol Min. Typ. Max. Unit
Output Rise Time
F
tr
—
500
—
ps
S
1500
Output Fall Time
F
tf
—
500
—
ps
S
1500
NOTE:
1. F = Fast Edge Rate
S = Standard Edge Rate
Parameter
Symbol
Min.
Typ.
Max.
Unit
Input Pin
CIN
—4
—
pF
Capacitance
Output Pin
COUT
—5
—
pF
Capacitance
CAPACITANCE
SYNERGY
SEMICONDUCTOR
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
